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Operation & Modeling of the MOS Transistor, by Yannis Tsividis
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Operation end Modeling of the MOS Transistor, 2/e carefully leads from physical principles to relevant working models of the MOS Transistors device. Models range from the very simple to sophisticated with the connections between models of successive levels clearly identified. Intuitive understanding is provided through extensive discussions.
- Sales Rank: #2174893 in Books
- Brand: Brand: McGraw-Hill Companies
- Published on: 1998-10-23
- Ingredients: Example Ingredients
- Original language: English
- Number of items: 1
- Dimensions: 9.75" h x 7.75" w x 1.50" l,
- Binding: Hardcover
- 648 pages
- Used Book in Good Condition
About the Author
Yannis Tsvidis is at Colombia University.
Most helpful customer reviews
1 of 1 people found the following review helpful.
Even for a ChemE it was Enjoyable
By Plasma Guy
I used this book several years ago for an advanced field effect device course in graduate school. In the beginning of graduate school I was lost when it came to understanding semiconductor devices as I had previously done my undergraduate work in chemical engineering. After hitching a ride on the Sze and Tsividis train, I was ready to go. This book is well written, concise and does not leave out detail. A truly remarkable text. It turned a frustrating subject into one I enjoy and appreciate. My only warning is; I hope you are good at math :)
A new updated edition would be nice. While the industry is still battling short channel effects, the techniques covered in the text are a bit out of date.
7 of 9 people found the following review helpful.
Excellent! Remarkable.
By A Customer
Just reading the Preface to this book, I fell in love with the author. I completely agree that sometimes the most rigorous and careful treatment of a subject actually makes it possible to study the material faster!! What always frustrated me and slowed me down in reading other books was the sloppiness and hand waving. It's amazing that many Ph.Ds and even authors of famous books like Uyemura's "Fundamentals of MOS ICs" don't understand the simple body effect, and talk about complete nonsense showing a 2 terminal capacitor with Vb applied to the bulk, and saying that the Vt will now change by the sqrt(Vb) body effect. They don't understand that the body effect is a 3 terminal effect and in 2 terminals if you apply Vb to bulk then your Vt will have to increase by Vb--NOT sqrt(Vb)!!! This book is a delight. Just the material on contact potentials was worth the money.
If you are serious about really understanding MOSFETs, if you hate non-sense and hand waving, then this book is for you.
5 of 5 people found the following review helpful.
Just a masterpiece........
By Art Malik
I am a graduate student with main area of interest in Mixed mode design,testing and device modelling.This book was suggested to me by my proffessor.It is the book for MOSFET.I have read many books on this topic like Tyagi,Foty,massobrio etc but this books stands apart.It is a very well written book.Its progress is very logical going from two terminal device to four terminal device with very good explanation of the physics.More importantly the emphasis on the approximations made makes things clearer.....
For a person working with Mosfets it is a must......
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